Publications

1980-1989

STUDIES OF THE N-GAAS/KOH-SE22–SE2- SEMICONDUCTOR LIQUID JUNCTION
B. J. Tufts, I. L. Abrahams, L. G. Casagrande and N. S. Lewis
Journal of Physical Chemistry, 1989, 93, 3260-3269

VOLTAMMETRY OF SEMICONDUCTOR ELECTRODES .2. CYCLIC VOLTAMMETRY OF FREELY DIFFUSING REDOX SPECIES AND ROTATING SEMICONDUCTOR DISK VOLTAMMETRY
P. G. Santangelo, G. M. Miskelly and N. S. Lewis
Journal of Physical Chemistry, 1989, 93, 6128-6136

IDEAL BEHAVIOR OF THE OPEN CIRCUIT VOLTAGE OF SEMICONDUCTOR LIQUID JUNCTIONS
M. L. Rosenbluth and N. S. Lewis
Journal of Physical Chemistry, 1989, 93, 3735-3740

PREPARATION AND ELECTROCHEMICAL CHARACTERIZATION OF CONICAL AND HEMISPHERICAL ULTRAMICROELECTRODES
R. M. Penner, M. J. Heben and N. S. Lewis
Analytical Chemistry, 1989, 61, 1630-1636

ANALYSIS OF THE PUBLISHED CALORIMETRIC EVIDENCE FOR ELECTROCHEMICAL FUSION OF DEUTERIUM IN PALLADIUM
G. M. Miskelly, M. J. Heben, A. Kumar, R. M. Penner, M. J. Sailor and N. S. Lewis
Science, 1989, 246, 793-796

SEARCHES FOR LOW-TEMPERATURE NUCLEAR-FUSION OF DEUTERIUM IN PALLADIUM
N. S. Lewis, C. A. Barnes, M. J. Heben, A. Kumar, S. R. Lunt, G. E. McManis, G. M. Miskelly, R. M. Penner, M. J. Sailor, P. G. Santangelo, G. A. Shreve, B. J. Tufts, M. G. Youngquist, R. W. Kavanagh, S. E. Kellogg, R. B. Vogelaar, T. R. Wang, R. Kondrat and R. New
Nature, 1989, 340, 525-530

ATOMIC RESOLUTION IMAGING OF ELECTRODE SURFACES IN SOLUTIONS CONTAINING REVERSIBLE REDOX SPECIES
M. J. Heben, R. M. Penner, N. S. Lewis, M. M. Dovek and C. F. Quate
Applied Physics Letters, 1989, 54, 1421-1423

EFFICIENT PHOTOVOLTAIC DEVICES FOR INP SEMICONDUCTOR LIQUID JUNCTIONS
M. J. Heben, A. Kumar, C. Zheng and N. S. Lewis
Nature, 1989, 340, 621-623

REACTION ENTROPIES AND ACID-BASE BEHAVIOR OF TRANSITION-METAL COMPLEXES IN RECAST NAFION FILMS
M. H. Schmidt and N. S. Lewis
Journal of Physical Chemistry, 1988, 92, 2018-2022

CYCLIC VOLTAMMETRY AT SEMICONDUCTOR PHOTOELECTRODES .1. IDEAL SURFACE-ATTACHED REDOX COUPLES WITH IDEAL SEMICONDUCTOR BEHAVIOR
P. G. Santangelo, G. M. Miskelly and N. S. Lewis
Journal of Physical Chemistry, 1988, 92, 6359-6367

STUDIES OF POLYCRYSTALLINE N-GAAS JUNCTIONS - EFFECTS OF METAL-ION CHEMISORPTION ON THE PHOTOELECTROCHEMICAL PROPERTIES OF N-GAAS/KOH-SE-/2-, N-GAAS/CH3CN-FERROCENE+/0, AND N-GAAS/AU INTERFACES
S. R. Lunt, L. G. Casagrande, B. J. Tufts and N. S. Lewis
Journal of Physical Chemistry, 1988, 92, 5766-5770

PREPARATION OF STM TIPS FOR INSITU CHARACTERIZATION OF ELECTRODE SURFACES
M. J. Heben, M. M. Dovek, N. S. Lewis, R. M. Penner and C. F. Quate
Journal of Microscopy-Oxford, 1988, 152, 651-661

APPLICATIONS OF SCANNING TUNNELING MICROSCOPY TO ELECTROCHEMISTRY
M. M. Dovek, M. J. Heben, N. S. Lewis, R. M. Penner and C. F. Quate
Acs Symposium Series, 1988, 378, 174-201

DESIGN OF A SCANNING TUNNELING MICROSCOPE FOR ELECTROCHEMICAL APPLICATIONS
M. M. Dovek, M. J. Heben, C. A. Lang, N. S. Lewis and C. F. Quate
Review of Scientific Instruments, 1988, 59, 2333-2336

CHEMICAL MODIFICATION OF N-GAAS ELECTRODES WITH OS-3+ GIVES A 15-PERCENT EFFICIENT SOLAR-CELL
B. J. Tufts, I. L. Abrahams, P. G. Santangelo, G. N. Ryba, L. G. Casagrande and N. S. Lewis
Nature, 1987, 326, 861-863

DESIGN OF A POTENTIOSTATIC CIRCUIT TO MEASURE MEDIATED ELECTRON-TRANSFER RATES AT METAL-ELECTRODES
P. G. Santangelo and N. S. Lewis
Journal of the Electrochemical Society, 1987, 134, C463-C463

KINETICS OF INTERFACIAL ELECTRON-TRANSPORT AT N-SI METHANOL INTERFACES
M. L. Rosenbluth and N. S. Lewis
Journal of the Electrochemical Society, 1987, 134, C463-C464

PHOTOELECTROCHEMISTRY OF POLYCRYSTALLINE N-GAAS ELECTRODES
S. R. Lunt, B. J. Tufts and N. S. Lewis
Journal of the Electrochemical Society, 1987, 134, C464-C464

MEASUREMENTS OF THE ELECTRON-TRANSFER RATES AT N-SI ELECTRODES
A. Kumar, M. L. Rosenbluth and N. S. Lewis
Journal of the Electrochemical Society, 1987, 134, C462-C462

COORDINATION CHEMISTRY OF SEMICONDUCTOR PHOTOELECTRODES - REACTIONS OF ETCHED N-GAAS WITH CO(III) COMPLEXES
I. L. Abrahams, B. J. Tufts and N. S. Lewis
Journal of the American Chemical Society, 1987, 109, 3472-3474

OPPORTUNITIES IN SEMICONDUCTOR PHOTOELECTROCHEMISTRY
I. L. Abrahams, L. G. Casagrande, M. D. Rosenblum, M. L. Rosenbluth, P. G. Santangelo, B. J. Tufts and N. S. Lewis
New Journal of Chemistry, 1987, 11, 157-165

EXAFS STUDIES ON POWDERS OF GAAS TREATED WITH CO COMPLEXES
I. L. Abrahams, C. E. Caley, S. R. Lunt, G. M. Miskelly, P. G. Santangelo, B. J. Tufts and N. S. Lewis
Journal of the Electrochemical Society, 1987, 134, C460-C460

REACTION ENTROPY MEASUREMENTS FOR TRANSITION-METAL IONS BOUND TO NAFION-COATED ELECTRODE SURFACES
M. H. Schmidt, C. M. Lieber and N. S. Lewis
Journal of the Electrochemical Society, 1986, 133, C332-C332

KINETIC-STUDIES OF CARRIER TRANSPORT AND RECOMBINATION AT THE NORMAL-SILICON METHANOL INTERFACE
M. L. Rosenbluth and N. S. Lewis
Journal of the American Chemical Society, 1986, 108, 4689-4695

PHOTOELECTROCHEMISTRY OF N-SI/METHANOL INTERFACES
M. L. Rosenbluth and N. S. Lewis
Journal of the Electrochemical Society, 1986, 133, C334-C334

PHOTOELECTROCHEMICAL ANODIZATION OF N-SI - FORMATION OF METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS YIELDING MINORITY-CARRIER DIFFUSION LIMITED OPEN-CIRCUIT VOLTAGES
M. D. Rosenblum, M. L. Rosenbluth and N. S. Lewis
Journal of the Electrochemical Society, 1986, 133, C334-C335

REACTION ENTROPY MEASUREMENTS FOR TRANSITION-METAL IONS BOUND TO NAFION-COATED ELECTRODE SURFACES
C. M. Lieber, M. H. Schmidt and N. S. Lewis
Journal of Physical Chemistry, 1986, 90, 1002-1003

KINETIC-STUDIES OF LIGAND SUBSTITUTION RATES FOR THE RU(NH3)5(H2O)2+ ION IN NAFION FILMS
C. M. Lieber, M. H. Schmidt and N. S. Lewis
Journal of the American Chemical Society, 1986, 108, 6103-6108

ELECTRODE KINETIC-STUDIES AT SI AND GAAS SEMICONDUCTOR/LIQUID INTERFACES
N. S. Lewis, M. L. Rosenbluth, L. G. Casagrande and B. J. Tufts
Journal of the Electrochemical Society, 1986, 133, C129-C129

LIGAND SUBSTITUTION KINETICS OF THE RU(NH3)5(H2O)2+ ION BOUND IN NAFION FILMS
N. S. Lewis, C. M. Lieber and M. H. Schmidt
Journal of the Electrochemical Society, 1986, 133, C132-C132

PHOTOELECTROCHEMISTRY OF N-GAAS, N-AL1-XGAXAS, AND N-GAAS1-XPX SURFACES
L. G. Casagrande, N. S. Lewis and S. M. Kelso
Journal of the Electrochemical Society, 1986, 133, C333-C333

COORDINATION CHEMISTRY OF SEMICONDUCTOR PHOTOELECTRODES - REACTIONS OF ETCHED N-GAAS WITH OCTAHEDRAL TRANSITION-METAL COMPLEXES
I. L. Abrahams, B. J. Tufts and N. S. Lewis
Journal of the Electrochemical Society, 1986, 133, C332-C333

PROBING POLYMER EFFECTS ON CHEMICAL-REACTIVITY - LIGAND SUBSTITUTION KINETICS OF RU(NH3)5(H2O)2+ IN NAFION FILMS
C. M. Lieber and N. S. Lewis
Journal of the American Chemical Society, 1985, 107, 7190-7191

MEASUREMENT OF THE ACTIVATION BARRIER FOR CARRIER TRANSPORT AT NORMAL-GAAS SEMICONDUCTOR LIQUID JUNCTIONS
L. G. Casagrande and N. S. Lewis
Journal of the American Chemical Society, 1985, 107, 5793-5794

630-MV OPEN CIRCUIT VOLTAGE, 12-PERCENT EFFICIENT N-SI LIQUID JUNCTION
M. L. Rosenbluth, C. M. Lieber and N. S. Lewis
Applied Physics Letters, 1984, 45, 423-425

STABILIZATION OF N-TYPE SILICON PHOTOANODES IN AQUEOUS-SOLUTION BY ELECTROSTATIC BINDING OF REDOX IONS INTO CHARGED POLYMERS
M. D. Rosenblum and N. S. Lewis
Journal of Physical Chemistry, 1984, 88, 3103-3107

CATALYTIC REDUCTION OF CO2 AT CARBON ELECTRODES MODIFIED WITH COBALT PHTHALOCYANINE
C. M. Lieber and N. S. Lewis
Journal of the American Chemical Society, 1984, 106, 5033-5034

EVIDENCE AGAINST SURFACE-STATE LIMITATIONS ON EFFICIENCY OF P-SI/CH3CN JUNCTIONS
C. M. Lieber, C. M. Gronet and N. S. Lewis
Nature, 1984, 307, 533-534

EFFECT OF CHARGE TRANSPORT IN ELECTRODE-CONFINED N,N'-DIALKYL-4,4'-BIPYRIDINIUM POLYMERS ON THE CURRENT POTENTIAL RESPONSE FOR MEDIATED, OUTER-SPHERE ELECTRON-TRANSFER REACTIONS
N. S. Lewis and M. S. Wrighton
Journal of Physical Chemistry, 1984, 88, 2009-2017

PHOTOEFFECTS AT THE SEMICONDUCTOR LIQUID INTERFACE
N. S. Lewis
Annual Review of Materials Science, 1984, 14, 95-117

A QUANTITATIVE INVESTIGATION OF THE OPEN-CIRCUIT PHOTOVOLTAGE OF THE SEMICONDUCTOR LIQUID INTERFACE
N. S. Lewis
Journal of the Electrochemical Society, 1984, 131, 2496-2503

CORRELATION OF THE PHOTOELECTROCHEMISTRY OF THE AMORPHOUS HYDROGENATED SILICON METHANOL INTERFACE WITH BULK SEMICONDUCTOR PROPERTIES
C. M. Gronet, N. S. Lewis, G. W. Cogan, J. F. Gibbons, G. R. Moddel and H. Wiesmann
Journal of the Electrochemical Society, 1984, 131, 2873-2880

SYSTEMATIC STUDIES OF THE SEMICONDUCTOR LIQUID JUNCTION - NORMAL-GALLIUM ARSENIDE PHOSPHIDE ANODES IN AQUEOUS SE2-/SE22- SOLUTIONS
C. M. Gronet and N. S. Lewis
Journal of Physical Chemistry, 1984, 88, 1310-1317

A 14% efficient nonaqueous semiconductor/liquid junction solar cell
J. F. Gibbons, G. W. Cogan, C. M. Gronet and N. S. Lewis
Applied Physics Letters, 1984, 45, 1095-1097
10.1063/1.95028

7.2-PERCENT EFFICIENT POLYCRYSTALLINE SILICON PHOTOELECTRODE
G. W. Cogan, C. M. Gronet, J. F. Gibbons and N. S. Lewis
Applied Physics Letters, 1984, 44, 539-541

A NOVEL SOLAR-CELL
N. S. Lewis
Nature, 1983, 305, 671-671

N-TYPE SILICON PHOTOELECTROCHEMISTRY IN METHANOL - DESIGN OF A 10.1-PERCENT EFFICIENT SEMICONDUCTOR LIQUID JUNCTION SOLAR-CELL
C. M. Gronet, N. S. Lewis, G. Cogan and J. Gibbons
Proceedings of the National Academy of Sciences of the United States of America-Physical Sciences, 1983, 80, 1152-1156

DESIGN OF EFFICIENT SEMICONDUCTOR LIQUID JUNCTION SOLAR-CELLS IN NON-AQUEOUS SOLVENTS
C. M. Gronet and N. S. Lewis
Journal of the Electrochemical Society, 1983, 130, C125-C125

EFFICIENT N-TYPE GALLIUM-ARSENIDE PHOSPHIDE ANODES IN AQUEOUS-ELECTROLYTES
C. M. Gronet and N. S. Lewis
Journal of the Electrochemical Society, 1983, 130, C109-C109

N-TYPE GAAS PHOTO-ANODES IN ACETONITRILE - DESIGN OF A 10.0-PERCENT EFFICIENT PHOTO-ELECTRODE
C. M. Gronet and N. S. Lewis
Applied Physics Letters, 1983, 43, 115-117

SHAPE AND SIZE SELECTIVE ELECTROSYNTHESIS WITH CHEMICALLY MODIFIED ELECTRODES
N. S. Lewis
Journal of the Electrochemical Society, 1982, 129, C338-C338

PHOTO-ELECTROCHEMICAL PROPERTIES OF GALLIUM ARSENIDE-PHOSPHIDE ANODES
C. M. Gronet and N. S. Lewis
Journal of the Electrochemical Society, 1982, 129, C333-C333

DESIGN OF A 13-PERCENT EFFICIENT N-GAAS1-XPX SEMICONDUCTOR-LIQUID JUNCTION SOLAR-CELL
C. M. Gronet and N. S. Lewis
Nature, 1982, 300, 733-735

IMPROVEMENT OF PHOTO-ELECTROCHEMICAL HYDROGEN GENERATION BY SURFACE MODIFICATION OF P-TYPE SILICON SEMICONDUCTOR PHOTO-CATHODES
R. N. Dominey, N. S. Lewis, J. A. Bruce, D. C. Bookbinder and M. S. Wrighton
Journal of the American Chemical Society, 1982, 104, 467-482

ELECTROCHEMICAL REDUCTION OF HORSE HEART FERRICYTOCHROME-C AT CHEMICALLY DERIVATIZED ELECTRODES
N. S. Lewis and M. S. Wrighton
Science, 1981, 211, 944-947

FERMI LEVEL PINNING OF PARA-TYPE SEMICONDUCTING INDIUM-PHOSPHIDE CONTACTING LIQUID ELECTROLYTE-SOLUTIONS - RATIONALE FOR EFFICIENT PHOTOELECTROCHEMICAL ENERGY-CONVERSION
R. N. Dominey, N. S. Lewis and M. S. Wrighton
Journal of the American Chemical Society, 1981, 103, 1261-1263

HETEROGENEOUS ONE-ELECTRON REDUCTION OF METAL-CONTAINING BIOLOGICAL MOLECULES USING MOLECULAR-HYDROGEN AS THE REDUCTANT - SYNTHESIS AND USE OF A SURFACE-CONFINED VIOLOGEN REDOX MEDIATOR THAT EQUILIBRATES WITH HYDROGEN
D. C. Bookbinder, N. S. Lewis and M. S. Wrighton
Journal of the American Chemical Society, 1981, 103, 7656-7659

CHOOSING RFI SHIELDING FOR THERMOPLASTIC RESINS
N. S. Lewis, R. A. Moran and R. L. Stadterman
Design News, 1980, 36, 211-&

HETEROGENEOUS ELECTRON-TRANSFER AT DESIGNED SEMICONDUCTOR-LIQUID INTERFACES - RATE OF REDUCTION OF SURFACE-CONFINED FERRICENIUM CENTERS BY SOLUTION REAGENTS
N. S. Lewis, A. B. Bocarsly and M. S. Wrighton
Journal of Physical Chemistry, 1980, 84, 2033-2043

HYPER-OSMOLALITY IN THE BURN PATIENT - ANALYSIS OF AN OSMOLAL DISCREPANCY
M. I. Kulick, N. S. Lewis, V. Bansal and R. Warpeha
Journal of Trauma-Injury Infection and Critical Care, 1980, 20, 223-228

SYNTHESIS AND CHARACTERIZATION OF A PHOTOSENSITIVE INTERFACE FOR HYDROGEN GENERATION - CHEMICALLY MODIFIED P-TYPE SEMICONDUCTING SILICON PHOTO-CATHODES
D. C. Bookbinder, J. A. Bruce, R. N. Dominey, N. S. Lewis and M. S. Wrighton
Proceedings of the National Academy of Sciences of the United States of America-Physical Sciences, 1980, 77, 6280-6284

PHOTO-REDUCTION AT ILLUMINATED P-TYPE SEMICONDUCTING SILICON PHOTOELECTRODES - EVIDENCE FOR FERMI LEVEL PINNING
A. B. Bocarsly, D. C. Bookbinder, R. N. Dominey, N. S. Lewis and M. S. Wrighton
Journal of the American Chemical Society, 1980, 102, 3683-3688